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Introduction to the Special Section on the 2014 Compound Semiconductor Integrate
2014年IEEE JSSC特刊介绍化合物半导体集成电路的最新进展。
130 nm SiGe, 57-66 GHz, 8 dBi增益, 接收NF > 5.5 dB, 发射OP 1dB > +13.5 dBm
化合物半导体毫米波SiGe收发器WiGig
▸创新点1：60 GHz收发器全集成设计，采用130 nm SiGe工艺，实现了4.97 mm²的紧凑面积，显著提升了集成度和性能。
▸创新点2：采用单元素收发天线设计，提供8 dBi增益，简化了系统复杂度，同时满足WiGig标准的TX EVM和RX灵敏度要求。
▸创新点3：符合WiGig标准，支持16 QAM调制，接收模式下噪声系数小于5.5 dB，发射模式下输出1 dB压缩点大于+13.5 dBm，性能优越。
▸创新点4：PLL设计实现了小于7°的RMS抖动，确保了高频信号的稳定性和精确性，提升了整体系统性能。
Abstract
he IEEE J OURNAL OF SOLID -
STATE CIRCUITS covers expanded papers from the
2014 Compound Semiconductor Integrated Circuit (CSIC)
Symposium, which was held October 19–22, 2014 in La Jolla,
California. This annual conference (formerly known as the
GaAs IC Symposium) is considered the premier venue for
presenting advances in millimeter wave, THz and optical cir-
cuits and systems with emphasis on compound semiconductor
technologies (GaAs, InP , GaN, SiGe) as well as hybrid and
heterogeneously-integ