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JSSC 2015第12期Data Converters40 nmSAR ADCNeural Network Accelerator

A 14 b 35 MSs SAR ADC Achieving 75 dB SNDR and 99 dB SFDR With Loop-Embedded Inp

一款14位35MS/s SAR ADC,通过环路嵌入式输入缓冲器实现74.5 dB SNDR和99 dB SFDR。
14位, 35MS/s, 74.5 dB SNDR, 99 dB SFDR, 54.5 mW
SAR ADC输入缓冲器自校准电流导向DAC高精度
创新点1:环路嵌入式输入缓冲器(电路创新)。该缓冲器将大采样电容与输入隔离,显著降低了ADC的驱动要求,同时通过SAR操作消除其非线性,仅增加12.5 mW功耗。
创新点2:自校准电流导向DAC(系统创新)。内置自校准功能,消除了对外部低阻抗参考的需求,提高了系统的集成度和稳定性,同时简化了设计。
创新点3:SAR操作消除缓冲器非线性(方法创新)。通过SAR算法的特性,有效抵消了输入缓冲器的非线性,使得可以使用简单的源跟随器,降低了设计复杂度。
创新点4:高性能指标(系统创新)。在40 nm CMOS工艺下,实现了74.5 dB的峰值SNDR和90/99 dB的SFDR,功耗仅为54.5 mW,Schreier FOM达到159.5 dB,展现了优异的性能。
Abstract
This paper presents a 14 bit 35 MS/s successive ap- proximation register (SAR) ADC that achieves a nearly constant 74.5 dB peak SNDR up to Nyquist and an SFDR of 90/99 dB for inputs near Nyquist and at low-frequencies, respectively. The ADC employs a loop-embedded input buffer that shields the large sam- pling capacitor from the input and thereby eases the ADC drive requirements significantly. Since the buffer's nonlinearity is can- celled by the SAR operation, a pair of basic source followers ca