← 返回 JSSC 论文列表JSSC 2015第12期RF & Wireless130nm SiGe BiCMOS
A SiGe Terahertz Heterodyne Imaging Transmitter With 33 mW Radiated Power and Fu
采用130nm SiGe BiCMOS技术实现320GHz高功率太赫兹发射器，辐射功率3.3mW，效率0.54%。
320GHz, 3.3mW辐射功率, 22.5dBm EIRP, 610mW功耗, 0.54%效率
太赫兹SiGe谐波振荡器锁相环辐射效率
▸基于耦合谐波振荡器的4×4辐射阵列
▸采用回程间隙耦合器结构优化辐射性能
▸集成片上锁相环实现太赫兹辐射源相位同步
Abstract
A high-power 320 GHz transmitter using 130 nm
SiGe BiCMOS technology ( 220/280 GHz) is re-
ported. This transmitter consists of a 4 × 4 array of radiators
based on coupled harmonic oscill ators. By incorporating a signal
filter structure called retu rn-path gap coupler into a differential
self-feeding oscillator, the pro posed 320 GHz radiator simulta-
neously maximizes the fundamental oscillation power, harmonic
generation, as well as o n-chip radiation. To facilitate the TX-RX
synchronization o