← 返回 JSSC 论文列表JSSC 2019第1期RF & Wireless28nm FDSOI, 16nm FinFET, 10nm FinFETPAM-4
JANUARY 2019 VOLUME 54 NUMBER 1 IJSCBC (ISSN 0018-9200) SPECIAL ISSUE ON THE 2018 INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC)
IEEE JSSC期刊论文摘要,涵盖多篇关于高速低功耗收发器的研究。
64 Gb/s, 19-58 Gb/s, 112 Gb/s
高速收发器低功耗PAM-4NRZFinFET
▸64 Gb/s低功耗收发器
▸自适应19-58 Gb/s PAM-4收发器
▸112 Gb/s PAM-4可重构发射器
Abstract
d-State Circuits Conference (ISSCC) ...................
......................................................................... Y. Frans, W. Dehaene, M. Motomura, and S.-J. Bae 3
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A 64 Gb/s Low-Power Transceiver for Short- Reach PAM-4 Electrical Links in 28-nm FDSOI
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