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A 0.53-THz Subharmonic Injection-Locked Phased Array With 63-μW Radiated Power in 40-nm CMOS
0.53-THz次谐波注入锁定相控阵,采用ILO链补偿相位误差,实现60°波束扫描。
529-534GHz输出频率,-12dBm辐射功率,0.24‰ DC-to-THz效率,260mW功耗
太赫兹次谐波注入锁定相控阵波束成形CMOS
▸ILO链补偿相位误差且不引入功率变化
▸六级三重推振荡器改善信号平衡和输出功率
▸无硅透镜、石英基板或衬底减薄条件下实现高效辐射
Abstract
This paper presents a 0.53-THz subharmonic injection-locked 1 × 4 phased array based on an injection-locked oscillator (ILO) chain. Thanks to the ILO chain, the phase errors in the phased array can be compensated without introducing power variation. This technique enables accurate beam steering with a 60 ◦ scan range in the E-plane at 0.53 THz. A six- stage triple-push oscillator is proposed to generate the signal at 0.53 THz. Compared with a conventional triple-push oscillator, it reduces layout constraints, improves signal balance, and enhances output power by at least 3 dB. The phased array is implemented in 40-nm CMOS. With an injection power of 0 dBm, the injection-locked phased array generates an output frequency from 529 to 534 GHz. At 531.5 GHz, the proposed phased array achieves −12-dBm radiated power and 0.24‰ dc-to-terahertz (THz) efficiency without the use of silicon lens, quartz super- strate, or substrate thinning. The chip consumes 260-mW dc power and occupies an area of 2.5 mm 2.