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A 78.5-dB SNDR Radiation- and Metastability- Tolerant Two-Step Split SAR ADC Operating Up to 75 MS/s With 24.9-mW Power Consumption in 65-nm CMOS
本文提出了一种14位抗辐射和抗亚稳态的两步分裂SAR ADC,峰值SNDR达78.5dB,峰值SFDR达103dB。
14-bit, 78.5-dB SNDR, 103-dB SFDR, 35 MS/s, <25-mW
SAR ADC抗辐射抗亚稳态冗余技术分裂架构
▸分层冗余技术:系统级到电路级的多层次冗余设计,包括系统级的错误检测与纠正机制(如奇偶校验位检测)和电路级的子基数-2 DAC及参考电压缩放,显著降低错误率并提升转换过程的鲁棒性。
▸分裂架构与错误检测:采用分裂式SAR ADC架构,结合第二级数字码的残留溢出检测、LSB重复的额外位周期检测等技术,实现错误识别与实时纠正,提升系统可靠性。
▸子基数-2 DAC与参考电压缩放:通过子基数-2 DAC设计和参考电压动态调整,引入电路级冗余,优化转换精度和抗辐射能力,支持78.5 dB SNDR和103 dB SFDR的高性能指标。
▸预放大器共享与数字校准:预放大器共享技术结合数字偏移校准,有效解决残留放大器与第一级比较器之间的偏移问题,提升整体信号链路的线性度和能效(25 mW低功耗)。
Abstract
This paper presents a 14-bit radiation- and metastability-tolerant two-step split successive-approximation register (SAR) analog-to-digital converter (ADC) that achieves a 78.5-dB peak signal-to-noise-and-distortion ratio (SNDR) and a 103-dB peak spurious-free dynamic range (SFDR) at 35 MS/s. The prototype operates up to 75 MS/s with less than 25-mW power consumption. To tolerate errors originating from radia- tions and/or metastability, multiple redundancy techniques are implemented hierarchically from the system level to the circuit level. At the system level, the deployment of the split architecture plus a few additional error detection techniques not only identify but also correct the errors, leading to a p to p 2 error rate reduction. These detection techniques include a residue over- and under (OU)-flow detection using the second-stage digital codes, an extra bit (EB)-cycle error detection with LSB repeating using a larger digital-to-analog converter (DAC) capacitor, and a parity bit (PB) error detection for on -the-fly SAR data latch protec- tion. Sub-radix-2 DAC and reference voltage scaling also create circuit-level intra- and inter-stage redundancy, further improving the robustness of the conversion process. Preamplifier sharing and offset digital calibration alleviate the offset problem between the residue amplifier (RA) and the first-stage comparator. Two reference buffers are implemented on chip with a 1.8-V supply. Fabricated in a 65-nm CMOS process, the ADC core occ