← 返回 JSSC 论文列表JSSC 2019第2期Memory65nm
A ReRAM Macro Using Dynamic Trip-Point-Mismatch Sampling Current-Mode Sense Ampl
提出动态跳变点失配采样电流模式感测放大器和低直流电流电压模式写入终止模块，提升ReRAM读取性能和写入效率。
65nm CMOS, 2-Mb容量, 读取延迟2.6ns
ReRAM电流模式感测放大器写入终止非易失性存储器物联网设备
▸动态跳变点失配采样（DTPMS）方案的小偏移电流模式感测放大器
▸低直流电流电压模式写入终止（LDC-VWT）模块
▸SET和RESET终止电路设计
Abstract
Many cost-aware IoE devices require embedded
nonvolatile memory (eNVM) to achieve high-speed read and
low-power write operations for serving as code and data storage
unit. Resistive random access memory (ReRAM) is a good
candidate for eNVM of Internet-o f-Everything (IoE) but suffers
low read yield and require long read latency ( T
CD) against small
R-ratio, large cell-resistance variations, and device-mismatch
induced input offset at current-mode sense amplifier (CSA). The
wide distribution in w