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JSSC 2019第3期RF & Wireless28nm

A 53-Gbit/s Optical Receiver Frontend With 0.65 pJ/bit in 28-nm Bulk-CMOS Laszlo Szilagyi , Jan Pliva, Ronny Henker , David Schoeniger

28纳米CMOS工艺实现的光学接收前端,支持53Gbps传输速率
28nm CMOS, 27GHz带宽, 53Gbit/s传输速率, 0.65pJ/bit能效
光学接收器CMOS带宽增强能效优化高速通信
创新点1:紧凑型带宽增强方法(电感共享和堆叠)通过创新的电路布局技术,在28nm CMOS工艺中实现了27 GHz的带宽,显著提升了接收器的信号处理能力,同时减少了芯片面积至0.009 mm²。
创新点2:混合信号偏移补偿系统通过结合模拟和数字技术,有效降低了噪声和抖动,提升了接收器的灵敏度和稳定性,在53 Gbit/s速率下实现了-6-dBm的光学调制幅度输入灵敏度。
创新点3:功率/数据速率自适应设计通过动态调整功耗与数据速率的关系,实现了能量效率的优化,从1.28 pJ/bit提升至0.67 pJ/bit(27 Gbit/s时),降低了52%的能耗。
创新点4:高能效设计在53 Gbit/s的光学传输中实现了0.65 pJ/bit的能量效率,展示了在高速数据传输中的低功耗优势,适用于未来光通信系统的需求。
Abstract
This paper demonstrates a receiver (RX) for optical communications implemented in a 28-nm digital bulk-CMOS technology. Compact bandwidth (BW)-enhancement methods, such as inductor sharing and stacking, result in a measured BW of 27 GHz. By using these area-efficient techniques and a mixed-signal offset compensation system, a small active area of 0.009 mm 2 is achieved. Noise and jitter are analyzed for the transimpedance amplifier and the limiting amplifier. Operation up to a data rate (DR) of 54 Gbit/s is demonstrated electrically with an energy efficiency of 0.6 pJ/bit. A commercial, 25-Gbit/s photo-diode (PD) is wire-bonded to the RX chip on a printed circuit board (PCB) assembly. Error-free (BER < 10 −12)o p t i c a l transmission at 53 Gbit/s is achieved with a transmitter (TX) using a 35-GHz electro-optical modulator. At this DR, an energy- per-bit of 0.65 pJ/bit is measured without the 16.5-mW output buffer, which only serves measurement purposes. An input sensitivity of −6-dBm optical modulation amplitude (OMA) is measured at 53 Gbit/s. Power/DR adaptivity is featured by the design; so when the DR can be reduced, the power consumption is decreased in order to maintain the energy efficiency. Energy- per-bit is improved from 1.28 pJ/bit by 52% to 0.67 pJ/bit at 27 Gbit/s.