← 返回 JSSC 论文列表JSSC 2019第3期Analog Circuits130nm SiGe BiCMOS
Integrated Synthetic Fourth-Order Q-Enhanced Bandpass Filter
本文展示了一种可调谐的微波四阶Q增强带通滤波器，采用130nm SiGe BiCMOS工艺实现。
4-8GHz中心频率可调, 2%-25%带宽可调, 151-166dB·Hz动态范围, 112-125mW功耗
带通滤波器Q增强SiGe BiCMOS可调谐微波频率
▸采用并联二阶Q增强LC带通滤波器合成四阶响应
▸开关变容二极管控制方案实现高线性大调谐范围
▸可变跨导器提供噪声-线性度权衡灵活性
Abstract
This paper demonstrates a tunable synthetic
fourth-order bandpass filter (BPF) at microwave frequencies.
Two parallel second-order Q-enhanced LC BPFs responses are
added with the out of phase to synthesize a fourth-order BPF
response. The filter is implemented in a 130-nm SiGe BiCMOS
technology with a core die area of 0 .53 × 0.7m m
2. The filter
center frequency can be tuned from 4 to 8 GHz (C-band). The
filter also achieves a wide 3-dB fractional bandwidth (BW) tuning
range of 2%–25%, with a passb