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JSSC 2019第4期Analog Circuits65nm

A 1-mW Class-AB Amplifier With 101 dB THDN for High-Fidelity 16 Ω Headphones in

一款用于高保真耳机的低功耗AB类放大器,实现-101.4dB THD+N和0.97mW静态功耗。
65nm CMOS, 0.97mW静态功耗, -101.4dB THD+N, 12.3MHz UGB, 108dB SNR, 51.2mW峰值功率
AB类放大器高保真耳机低功耗THD+NCMOS
级联驱动网状技术限制输出级高摆幅节点数量
频率补偿方案扩展单位增益带宽和20kHz环路增益
结合两种技术实现超低非线性失真
Abstract
A low-power class-AB amplifier for high-fidelity headphones is presented. The linearity of a class-AB amplifier strongly depends on the loop gain over the audio band and voltage swing. In this paper, a cascode-driven mesh technique limits the number of high-swing nodes in the output stage, thereby preserving the loop gain of the preceding gain stages. A frequency compensation scheme is proposed that extends the unity-gain bandwidth (UGB) and increases the loop gain at 20 kHz. Combining these two te