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JSSC 2019第6期Clocking & PLLs0.13µmCMOS Image Sensor

A CMOS SPAD Line Sensor With Per-Pixel Histogramming TDC for Time-Resolved

一款基于SPAD的线阵传感器,具有像素级直方图TDC,用于时间分辨多光谱成像。
512×16阵列, 51.20ps时间分辨率, 102.1G事件/s(SPC模式)
单光子雪崩二极管时间数字转换器多光谱成像荧光寿命成像线阵传感器
创新点1:像素级32-bin直方图TDC(电路创新) - 每个像素集成32-bin直方图时间数字转换器(TDC),提供51.20 ps的平均时间分辨率,且直方图bin分辨率可在51.20 ps至6.55 ns间可调,显著提升时间测量精度和灵活性。
创新点2:双SPAD阵列优化不同光谱响应(系统创新) - 采用两个独立SPAD阵列,分别针对蓝绿光谱区(49.31%填充因子)和红-近红外光谱区(15.75%填充因子)优化,实现多光谱探测能力。
创新点3:支持三种工作模式提升计数率(系统创新) - 提供单光子计数(102.1 G事件/秒)、时间相关单光子计数(192.4 M事件/秒)和片上直方图模式(16.5 G事件/秒),计数率比TCSPC模式提升85倍。
创新点4:高集成度线传感器设计(系统创新) - 在0.13 µm CMOS工艺下实现512×16像素线传感器,像素间距仅23.78 µm,同时保持高填充因子和多功能性,适用于时间分辨多光谱成像应用。
Abstract
A 512 × 16 single photon avalanche diode (SPAD)- based line sensor is designed in a 0.13- µm CMOS image sensor technology for time-resolved multispectral beam scanned imaging. The sensor has 23.78- µm pixel pitch and incorporates one SPAD array with 49.31% fill factor optimized for detec- tion in the blue–green spectral region, and a second array at 15.75% fill factor optimized for the red-near-infrared response spectral region. Each pixel contains a 32-bin histogramming time-to-digital converter (TDC) with a mean time resolution of 51.20 ps. Histogram bin resolutions are adjustable from 51.20 ps to 6.55 ns per bin. The line sensor can operate in single photon counting (SPC) mode (102.1 giga-events/s), time- correlated SPC (TCSPC) mode (192.4 million-events/s) or on-chip histogramming mode (16.5 giga-events/s), increasing the count rate up to 85 times compared to TCSPC mode. Sensor capability is demonstrated through spectral fluorescence lifetime imaging, resolving three fluorophore populations with distinct fluorophore lifetimes.