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JSSC 2019第7期Analog Circuits7nmBandgap Reference

A 1-V Bandgap Reference in 7-nm FinFET With a Programmable Temperature Coefficient and Inaccuracy of ±0.2% From −45◦C to 125 ◦C

提出了一种在7nm FinFET工艺中实现的可编程温度系数的1V精密电压参考源。
1V, 最大误差±0.2%, 最小温度系数6ppm/°C, 线调节率0.1%/V, 面积0.078mm²
电压参考源FinFET可编程温度系数曲率补偿寄生BJT
创新点1:基于7nm FinFET工艺的寄生BJT实现,利用先进工艺节点中的寄生元件构建电压基准,突破了传统BJT在纳米级工艺中的集成限制,实现了1-V高精度输出(±0.2%误差)。
创新点2:可编程温度系数(-7 mV/100°C至+8 mV/100°C),通过数字编程动态调整温度特性,适应不同应用场景需求,最小温度系数达6 ppm/°C(-45°C至125°C)。
创新点3:两种曲率补偿技术,结合器件-电路协同优化(SPICE建模支持),显著改善宽温范围内的非线性误差,提升温度稳定性。
创新点4:0.1%/V的线路调节能力与0.078 mm²的超小面积,通过工艺扩展修调技术兼顾高集成度与低功耗,适用于大规模SoC集成。
Abstract
We present a 1-V precision voltage reference with a programmable temperature coefficient (“ temp-co”). The voltage reference is based on a parasitic bipolar junction transistor (BJT) realized within the process steps available in the chosen 7-nm FinFET technology. Details of its characterization and SPICE modeling are presented to provide insight into key device–circuit optimization choices. The trimming techniques needed to cope with process spread together wi th two curvature compensation techniques are presented. The reference achieves a maximum inaccuracy of ±0.2% and a minimum temp-co of 6 ppm/ ◦C from −45◦C to 125 ◦C. Furthermore, its temp-co is digitally programmable between −7 mV/100 ◦Ca n d +8 mV/100 ◦C. Its line regulation is 0.1%/V , and it occupies 0.078 mm 2.