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JSSC 2019第7期Power Management40nmCMOS Image Sensor

A 192128 Time Correlated SPAD Image Sensor in 40-nm CMOS Technology

40nm CMOS工艺下实现的192×128像素SPAD时间分辨单光子计数图像传感器
40nm CMOS, 13%填充因子(微透镜后42%), 18.6k帧/秒, 219ps FWHM IRF, 25Hz中值DCR
单光子雪崩二极管时间数字转换器荧光寿命成像CMOS图像传感器时间相关单光子计数
▸33ps分辨率、135ns全量程12位TDC
▸集成数字校准方案实现PVT补偿
▸圆柱形微透镜将填充因子提升至42%
Abstract
A 192 × 128 pixel single photon avalanche diode (SPAD) time-resolved single photon counting (TCSPC) image sensor is implemented in STMicroelectronics 40-nm CMOS technology. The 13% fill factor, 18.4 µm × 9.2 µm pixel con- tains a 33-ps resolution, 135-ns full scale, 12-bit time-to-digital converter (TDC) with 0.9-LSB differential and 5.64-LSB integral nonlinearity (DNL/INL). The sensor achieves a mean 219-ps full- width half-maximum (FWHM) impulse response function (IRF) and is operable at up to