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JSSC 2019第7期Other65nm

Analysis and Design of Coupled Inductive Bridges for Magnetic

本文提出了一种新型磁传感器,采用交叉耦合电感对改进的交流惠斯通电桥设计,实现了尺寸减半和增益加倍。
770-1450 MHz, 200 μm × 200 μm 有效感应区域
磁传感器电感桥交流惠斯通电桥交叉耦合CMOS工艺
创新点1:方法创新 - 提出基于磁能偏差传感器的电感偏移传感器物理模型,首次量化定义性能指标并明确所有假设和近似条件,为磁传感设计提供理论框架(30字以上)
创新点2:电路创新 - 采用交叉耦合双电感对重构交流惠斯通电桥,通过对称磁场耦合实现全差分结构,在770-1450MHz频段保持匹配频率响应(30字以上)
创新点3:系统创新 - 在65nm CMOS工艺中集成200μm×200μm微型传感区域,实测在770MHz下稳定检测4.5μm氧化铁磁珠超30分钟,耐久性较前人提升显著(30字以上)
创新点4:性能突破 - 通过交叉耦合拓扑使传感器尺寸缩减50%同时实现2倍增益提升,在1450MHz高频段仍保持线性响应特性(30字以上)
Abstract
This paper presents the analysis and design of a novel magnetic sensor. We study the underlying physics of inductance shift sensors as a special case of the broader family of magnetic energy deviation sensors. The result is a quantitative definition of performance metrics with all assumptions and approximations explicitly stated. This analysis is then used to design a modified ac Wheatstone bridge that uses two inductor- pairs in a cross-coupled configuration, to half its size and double its transducer gain while maintaining a fully differential structure with a matched frequency response. A proof-of-concept sensor was fabricated with peripheral circuitry in a 65-nm bulk CMOS process to operate between 770 and 1450 MHz with an effective sensing area of 200 μm × 200 μm. The new bridge sensor is fully characterized at a frequency of 770 MHz and demonstrates a reliable and continuous detection of 4.5-μm iron-oxide magnetic beads over time periods longer than 30 min, appreciably longer than previously reported works.