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JSSC 2019第8期RF & Wireless28nm

A Broadband CMOS RF Front End for Direct Sampling Satellite Receivers

比较两种新型RF可编程增益放大器架构在宽带CMOS RF前端中的应用。
28nm CMOS, 50mW功耗, 0.32mm²面积, 增益范围42dB, 0.25dB步进
RF可编程增益放大器宽带CMOS直接采样接收器电压模式电流模式
电压模式RFPGA-V的多开关多放大器配置
电流模式RFPGA-I的电流导向方法
无需片外电感器的有源反馈拓扑
Abstract
This paper presents a comparative analysis between two new architectures for RF programmable-gain amplifiers (RFPGAs): voltage-mode RFPGA-Vand current-mode RFPGA-I. RFPGA-V utilizes multiple-switch-multiple-amplifier configura- tion and gain interpolation method to achieve a fine gain step of 0.25-dB over 42-dB gain range for the band of 250 MHz to 2.3 GHz. Meanwhile, RFPGA-I uses a current steering approach to achieve a fine gain step of 0.25-dB over 42-dB gain range for an even wider band of 250 MH