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A Three-Stage 18524-GHz GaN-on-SiC 4 W 40 Efficient MMIC PA
本文介绍了一种三阶段K波段GaN-on-SiC MMIC功率放大器的设计与性能。
150-nm GaN-on-SiC, 4 W, 40% PAE, 18-24 GHz
GaN-on-SiCMMIC功率放大器K波段效率
▸创新点1：三阶段架构设计（系统创新）。采用1:2:8的晶体管比例分级策略，实现18.5-24 GHz带宽内超过20 dB的饱和增益，显著提升宽带信号放大能力与系统稳定性。
▸创新点2：反应性组合输出级（电路创新）。通过两个8×100 µm HEMT的感性组合及独立源极通孔设计，优化高频阻抗匹配，在18-24 GHz范围内输出功率>3.2 W且波动<1.5 dB。
▸创新点3：高效率GaN-on-SiC工艺（方法创新）。基于150 nm GaN-on-SiC工艺实现40%以上功率附加效率(PAE)，结合动态漏极电压调控技术，平衡带宽与效率性能。
▸创新点4：多晶圆统计验证（方法创新）。对5片晶圆230个裸片进行统计分析，8个封装MMIC实测数据验证设计鲁棒性，支持工业化量产一致性。
Abstract
This paper presents the design and mea-
sured continuous-wave (CW) performance of a three-stage
K-band monolithic microwave integrated circuit (MMIC) power
amplifier (PA) implemented in a 150-nm GaN-on-SiC process.
The transistor peripheries are staged at a ratio of 1:2:8, and the
output stage consists of two reactively combined 8 × 100 µm
HEMTs with individual source vias. The measured peak output
power is greater than 4 W with peak power added efficiency
(PAE) of greater than 40%. The output pow