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Introduction to the Special Section on the 2018 IEEE BCICTS Conference
2018 IEEE BCICTS会议精选论文扩展版，涵盖SiGe和III-V/CMOS IC技术的最新研究。
45-nm silicon on insulator
SiGeIII-V/CMOSIC技术无线通信毫米波
▸创新点1：宽带I/Q CMOS调制器设计：采用45nm SOI CMOS技术实现dc-60GHz宽带I/Q调制器，为下一代多标准高容量无线回程链路提供关键模块，显著提升带宽和集成度。
▸创新点2：非理想性分析：深入分析Cartesian发射机和调制器系统的非理想性，提出改进方案，优化系统性能，减少失真和噪声。
▸创新点3：性能限制研究：系统研究宽带I/Q调制器的性能限制，提出突破现有技术瓶颈的方法，提升调制器的线性度和动态范围。
▸创新点4：高采样率ADC设计：采用55nm SiGe BiCMOS技术实现64GHz采样率的2×时间交织ADC，SFDR和ENOB达到4bits，功耗仅为1.25W，显著提升采样速率和能效比。
Abstract
ATE CIRCUITS features expanded versions of
key invited papers that were presented at the 2018 IEEE
BiCMOS and Compound Semiconductor Integrated Circuits
and Technology Symposium (BCICTS), held at Sheraton
San Diego Hotel and Marina, San Diego, CA, USA,
on October 14–17, 2018.
After 39 years of the Compound Semiconductor IC Sym-
posium (CSICS) and 32 years of the Bipolar/BiCMOS Circuit
and Technology Meeting (BCTM), BCICTS had its successful
debut in San Diego in 2018. BCICTS offers a unique gath