Self-Convergent Trimming SRAM True Random Number Generation With In-Cell Storage

Abstract

In this paper, a novel 4T-2R self-aligned nitride (SAN) cell-integrated static random-access memory (SRAM) cell is first implemented for true random number generator (TRNG) applications. The SRAM can be latched to either state by the unpredictable random telegraph noise (RTN) on the contact RRAMs (CRRAMs). With a self-convergent trimming mech- anism, mismatches in SRAM cells due to process variation can be effectively reduced, enabling the small RTN signal to toggle the states randomly. In additi