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JSSC 2019第10期Clocking & PLLs28nmCDR

A 10-Gb/s, 0.03-mm 2, 1.28-pJ/bit Half-Rate Injection-Locked CDR With Path Mismatch Tracking Loop in a 28-nm CMOS Technology

提出一种带路径失配跟踪环路的10Gb/s半速率全数字注入锁定时钟数据恢复电路
28nm CMOS, 0.9V, 10Gb/s, 12.8mW, 0.03mm²
时钟数据恢复注入锁定全数字电路路径失配抖动容限
采用路径失配跟踪环路优化注入脉冲路径延迟
通过相位检测器错误信息与数据转换极性关联实现鲁棒注入
在路径延迟失配情况下仍保持良好抖动容限性能
Abstract
A 10-Gb/s, 0.03-mm 2, 1.28-pJ/bit half-rate all- digital injection-locked clock and data recovery (ILCDR) with a path mismatch tracking (PMT) loop is presented. When injection timing is not perfectly aligned with the phase of the oscillator , the timing margin of the data sampler is reduced, resulting in the degradation of jitter tolerance (JTOL) performance. The proposed ILCDR achieves robust injection behavior over path mismatch variations by correlating the error information from the phase detector (PD) in the conventional phase-locked loop (PLL)-based CDR with the polarity of the data transition, thereby adapting the path delay of the injection pulse and placing it at the optimum timing. Fabricated in 28-nm CMOS technology, the proposed ILCDR occupies 0.03 mm 2 and consumes 12.8 mW at 10 Gb/s with a 0.9-V supply voltage. The measured JTOL is 1 UIpp at 31 MHz with the target bit error rate (BER) of 10 −12 in the presence of the initial path delay mismatch.