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JSSC 2019第10期Memory28nm

A 28-nm 320-Kb TCAM Macro Using Split- Controlled Single-Load 14T Cell and Tripl

28纳米工艺下采用新型14T单元和三重容差电压感测放大器的低功耗高速TCAM设计
28nm CMOS, 710ps搜索延迟, 0.422fJ/bit/搜索能耗
三元内容寻址存储器14T单元电压感测放大器低功耗设计28纳米工艺
▸分裂控制单负载14T（SCSL-14T）单元结构
▸三重容差电压感测放大器（TM-VSA）
▸待机与工作模式双低泄漏设计
Abstract
Ternary content-addressable memory (TCAM) is limited by large cell area, high search power, significant active-mode leakage current, and a tradeoff between search speed and signal margin on the match-line (ML). In this paper, we developed a split-controlled single-load 14T (SCSL-14T) TCAM cell and a triple-margin voltage sense amplifier (TM-VSA) to achieve the following: 1) compact cell area; 2) lower search delay and search energy; 3) reduced current leakage in standby and active modes; and 4) to