← 返回 JSSC 论文列表JSSC 2019第10期Clocking & PLLs180nmVCO
A 6800-μm2 Resistor-Based Temperature Sensor With 035 C 3σ Inaccuracy in 180-nm
一种基于电阻的紧凑型温度传感器，在180nm CMOS工艺中实现，面积仅6800μm²，精度±0.35°C。
±0.35°C (3σ)精度，0.12°C (1σ)分辨率，2.8kSa/s采样率
温度传感器电阻基CMOSVCOΣΔ调制器
▸创新点1：采用基于VCO的相位域ΣΔ调制器，通过将温度信息转换为相位信号，显著提高了传感器的抗噪声能力和精度，实现了±0.35°C的3σ不准确度。
▸创新点2：使用紧凑数字计数器作为环路滤波器，替代传统模拟滤波器，大幅减小了电路面积，同时保持了高精度，传感器面积仅为6800 μm²。
▸创新点3：在小面积下实现高精度，通过优化电路设计和数字信号处理技术，在180-nm CMOS工艺中实现了0.12°C的1σ分辨率，适用于高密度集成应用。
▸创新点4：采用时间域量化技术，通过数字计数器对相位信号进行量化，有效降低了量化噪声，进一步提升了传感器的分辨率和稳定性。
Abstract
This paper describes a compact resistor-based tem-
perature sensor that has been realized in a 180-nm CMOS
process. It occupies only 6800 μm2, thanks to the use of a
highly digital voltage-controlled oscillator (VCO)-based phase-
domain sigma–delta modulator, whose loop filter consists of a
compact digital counter. Despite its small size, the sensor achieves
±0.35
◦C( 3σ) inaccuracy from −35 ◦C to 125 ◦C. Furthermore,
it achieves 0.12 ◦C( 1 σ) resolution at 2.8 kSa/s, which is
mainly limited by t