JSSC 2019第10期Other40nm

A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0 Native B

基于MOSFET软栅氧化击穿随机性的物理不可克隆函数，具有自限机制和差分读出方案。

40nm CMOS, 0.9V, 40Mb/s, 51.8fJ/bit, 0%原生误码率(1V)

物理不可克隆函数软氧化击穿自限机制差分读出NIST测试

▸利用软栅氧化击穿随机性生成PUF

▸自限机制确保每个NMOS对仅产生一个击穿点

▸无参考敏感放大器实现差分读出

Abstract

This paper presents a physically unclonable func- tion (PUF) based on the randomness of soft gate oxide break- down (BD) locations in MOSFETs, namely, soft-BD PUF .T h e proposed PUF circuit features a self-limiting mechanism that generates exactly one soft-BD spot in a pair of NMOS transistors. Highly stable “0” and “1” bits with an equal probability of 0.5 are extracted based on the locations of the generated BDs. A differen- tial readout scheme is employed based on the proposed reference- fre