▸创新点1：采用STT-MRAM技术，实现了非易失性存储与逻辑电路的集成，显著提升了MCU的数据保持能力和抗干扰性能。
▸创新点2：低功耗设计，通过优化电路结构和电源管理策略，将功耗降低至4714 µW，适用于电源受限的应用场景。
▸创新点3：高性能微控制器单元，支持200 MHz的高频操作，提升了MCU的计算能力和响应速度，满足实时处理需求。
▸创新点4：MOSMTJ混合架构，结合MOSFET和磁隧道结（MTJ）的优势，实现了高效能和高密度的电路设计。
Abstract
The demand for energy-efficient, high-performance microcontroller units (MCUs) for the use in power-supply- Manuscript received April 25, 2019; revised June 24, 2019; accepted July 12, 2019. Date of publication August 13, 2019; date of current version October 23, 2019. This paper was appr oved by Guest Editor Sriram V angal. This work was supported in part by ImPACT Program of CSTI, in part by Industry-Academic Colla boration of CIES Consortium through spin-transfer- torque magnetoresistive random access memory (STT-MRAM) Research and Development Program, and in part by the Japan Society for the Promotion of Science (JSPS) KAKENHI under Grant 16KT0187 and Grant 17KK0001. (Corresponding author: Masanori Natsui.) M. Natsui and T. Hanyu are with the Laboratory for Brainware Systems, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan, also with the Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8577, Japan, and also with the Center for Inno- vative Integrated Electronic Systems, Tohoku University, Sendai 980-8577, Japan (e-mail: natsui@riec.tohoku.ac.jp). D. Suzuki and A. Tamakoshi are with the Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan, and also with the Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-8577, Japan. T. Watanabe, H. Honjo, H. Koike, T. Nasuno, T. Tanigawa, Y . Noguchi, and M. Y asuhira are with the Center for Innovative I