← 返回 JSSC 论文列表JSSC 2019第12期RF & Wireless14nmTransceiver
A Sub-6-GHz 5G New Radio RF Transceiver Supporting EN-DC With 315-Gbs DL and 127
全球首款支持5G sub-6GHz NR和LTE EN-DC的单片射频收发器，采用14nm FinFET CMOS工艺。
噪声系数6.5-9.3 dB, OOB IIP3 +3dBm, OOB IIP2 >+70dBm, EVM -39.5dB@+4dBm
5G NRLTE EN-DC载波聚合MIMOSAW-less
▸支持四频段载波聚合和3个4×4 MIMO
▸采用流水线结构和频段可切换变压器减小芯片面积
▸支持SAW-less架构和数字预失真操作
Abstract
The world’s first single-chip RF transceiver
to support 5G sub-6-GHz new radio (NR) and long-
term evolution (LTE) E-UTRA New Radio-Dual Connectivity
(EN-DC) in 14-nm FinFET CMOS technology is presented.
The single-chip transceiver integrates identical primary and
diversity receivers (RXs) with seven pipelines for supporting four
inter-band carrier aggregation (CA) with three 4 × 4M I M O ,
two independent transmitter (TX) chains, eight frequency syn-
thesizers for RX and TX, and on-chip digitall