JSSC 2020第1期Clocking & PLLs10nmDLLDRAM

A 11-V 10-nm Class 64-Gb-s-Pin 16-Gb DDR5 SDRAM With a Phase Rotator-ILO DLL- Hi

10nm级CMOS工艺下1.1V 6.4Gb/s/pin 16Gb DDR5 SDRAM，性能与功耗优于DDR4。

1.1V, 6.4Gb/s/pin, 16Gb

DDR5 SDRAMILO DLL相位旋转器DFEFFE

▸采用ILO DLL和相位旋转器减少时钟树抖动

▸引入新的写电平训练逻辑减少DRAM翻转时间

▸使用DFE和FFE提高接口速度

Abstract

A 1.1-V 6.4-Gb/s/pin 16-Gbit DDR5 is presented in 10-nm class CMOS technology. Various functions and circuits’ techniques are newly adopted to improve performance and power consumption compared with DDR4 SDRAM. First, to realize two times higher speed than DDR4, the injection-locked oscillator (ILO) delay locked loop (DLL) is adopted for the low jitter high- speed performance. The proposed DLL with phase rotator (PR) and ILO allows to minimize the clock tree of DRAM, lowering skew and jitter in