JSSC 2020第1期MemoryFlash Memory

A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology Noboru Shibata , Kazushige Kanda, Takahiro Shimizu, Jun Nakai, Osamu Nagao, Naoki Kobayashi, Makoto Miakashi , Y asushi Nagadomi, Tomoaki Nakano, Takahisa Kawabe, Taira Shibuya, Mario Sako, Kosuke Y anagidaira, Toshifumi Hashimoto, Hiroki Date, Manabu Sato, Tomoki Nakagawa, Junji Musha, Takatoshi Minamoto, Mizuki Uda, Dai Nakamura, Katsuaki Sakurai, Takahiro Y amashita, Jieyun Zhou, Ryoichi Tachibana, Teruo Takagiwa, Takahiro Sugimoto, Masatsugu Ogawa, Y usuke Ochi, Kazuaki Kawaguchi, Masatsugu Kojima, Takeshi Ogawa, Tomoharu Hashiguchi, Ryo Fukuda, Masami Masuda, Koichi Kawakami, Tadashi Someya, Y asuyuki Kajitani, Y uuki Matsumoto, Jumpei Sato, Namasivayam Raghunathan, Y ee Lih Koh, Shuo Chen, Juan Lee, Hiroaki Nasu, Hiroshi Sugawara, Koji Hosono, Toshiki Hisada, and

一款具有133-Tb容量、4位元存储单元的3D闪存，采用96层字线技术，实现8.5 Gb/mm²的高密度存储。

133-Tb容量, 4-bit/cell, 96-WL-layer, 8.5 Gb/mm²

3D闪存4位元存储单元高密度存储源偏压负感测两步编程

▸源偏压负感测技术（电路创新）：通过CLK控制的源偏压负感测技术，实现了深负Vth感测，同时保持低供电电压，显著提升了读取精度和能效比。

▸两步编程方法（方法创新）：采用新型8-16两步编程方法，结合VDD生成器增强技术，将QLC的Vth分布宽度缩小18%，编程时间（tProg）提升18%，显著提高了存储单元的可靠性和编程效率。

▸字线过驱动技术（系统创新）：通过页/状态依赖的字线过驱动技术，缩短了字线瞬态时间8%，优化了多平面操作中的时序性能，提升了整体系统响应速度。

▸独立平面读取技术（系统创新）：支持多平面操作中从不同平面读取不同字线地址，并允许混合选择QLC/TLC/SLC页，提供了灵活的系统实现方案，增强了存储器的兼容性和可配置性。

Abstract

A 1.33-Tb 4-bit/cell quadruple-level (QLC) 3-D ﬂash memory in a 96-word-line (WL)-layer technology that achieves 8.5 Gb/mm2 has been developed. This is the biggest capacity and the highest bit density ever reported. A source-bias-negative-sense with CLK-control allows deep negative V th sensing while main- taining low supply voltage. A new two-step ( 8–16) programming method and VDD generator enhancement realized a narrow Vth for QLC with 18% tProg improve ment. Page/state-dependent word-line (WL) overdrive shortens the WL transient time by 8%. An independent plane read enables reading from different WL address from each plane in multi-plane operation. Besides, mixing selection of QLC pages (lower/middle/upper/top) in one plane and triple-level cell (TLC) pages (lower/middle/upper) or single-level cell (SLC) page in the other is also supported to provide ﬂexibility for system implementation.