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JSSC 2020第1期Other65nm

A Self-Regulated and Reconfigurable CMOS Physically Unclonable Function Featuring Zero-Overhead Stabilization Dai Li , Student Member , IEEE, and Kaiyuan Y ang , Member , IEEE

提出一种65nm CMOS技术的可重构物理不可克隆函数设计,具有高稳定性和低能耗。
65nm CMOS, 0.7-1.4V, 0.00182% BER, 15.3 fJ/bit
物理不可克隆函数CMOS可重构低能耗高稳定性
创新点1:基于亚阈值反相器的静态PUF单元,采用65nm CMOS工艺,实现了0.3%的原始比特错误率和0.062-fJ/bit的核心能效,显著提升了PUF的稳定性和能效。
创新点2:原生晶体管电压调节方案,通过灵活的晶体管设计实现了低开销的电源调节,具有6-mV/V的线路灵敏度,有效抵抗电压波动,增强了PUF的环境适应性。
创新点3:零开销稳定化方案,通过无面积开销的可重构设计,实现了PUF单元的稳定化,无需芯片冗余,最终将原始比特错误率降低至0.00182%,显著提升了PUF的可靠性。
创新点4:通过体偏置扫描检测不稳定比特,替代传统的温度扫描,显著降低了测试成本,同时保持了PUF的高稳定性和低比特错误率,适用于军事级温度范围(-55°C至125°C)和电源电压变化(0.7V至1.4V)。
Abstract
This article presents a reconfigurable physically unclonable function (PUF) design fabricated using 65-nm CMOS technology. A subthreshold-inverter-based static PUF cell achieves 0.3% native bit error rate (BER) at 0.062-fJ per bit core energy efficiency. A flexible, native transistor- based voltage regulation scheme achieves low-overhead supply regulation with 6-mV/V line sensitivity, making the PUF resis- tant against voltage variations. Additionally, the PUF cell is designed to be reconfigurable with no area overhead, which enables stabilization without redundancy on chip. Thanks to the highly stable and self-regulated PUF cell and the zero-overhead stabilization schem e, a 0.00182% native BER is obtained after reconfiguration. The proposed design shows 0.12%/10 ◦Ca n d 0.057%/0.1-V bit error across the military-grade temperature range from −55 ◦C to 125 ◦C and supply voltage variation from 0.7 to 1.4 V . The total energy per bit is 15.3 fJ. Furthermore, the unstable bits can be detected by sweeping the body bias instead of temperature during enrollment, thereby significantly reducing the testing costs. Last but not least, the prototype exhibits almost ideal uniqueness and randomness, with a mean inter-die Hamming distance (HD) of 0.4998 and a 1020 × inter- /intra-die HD separation. It also passes both NIST 800-22 and 800-90B randomness tests.