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JSSC 2020第3期Clocking & PLLs40nmPLL

A 0.025-mm 2 0.8-V 78.5-dB SNDR VCO-Based Sensor Readout Circuit in a Hybrid PLL-M Structure Wenda Zhao , Student Member , IEEE

提出一种基于VCO的传感器读出电路,采用混合PLL-ΣΔ调制结构,实现高能效和小面积。
40nm CMOS, 0.8V, 78.5dB SNDR, 10kHz带宽, 4.68μW, 0.025mm²
VCO传感器读出PLLΣΔ调制动态元件匹配
混合PLL-ΣΔ调制结构
相位锁定与PFD阵列实现量化与DEM
低成本DWA方案提升DAC线性度
Abstract
This article presents a capacitively coupled voltage- controlled oscillator (VCO)-based sensor readout featuring a hybrid phase-locked loop (PLL)-  modulator structure. It leverages phase-locking and phase-frequency detector (PFD) array to concurrently perform quantization and dynamic element matching (DEM), much-reducing hardware/power compared with the existing VCO-based readouts’ counting scheme. A low-cost in-cell data-weighted averaging (DWA) scheme is presented to enable a highly linear tri-level digital-to-analog converter (DAC). Fabricated in 40-nm CMOS, the prototype readout achieves 78-dB SNDR in 10-kHz bandwidth, consuming 4.68 μW and 0.025-mm 2 active area. With 172-dB Schreier figure of merit, its efficiency ad vances the state-of-the-art VCO-based readouts by 50 ×.