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JSSC 2020第3期Power Management65nmVCO

A 230-GHz High-Power and Wideband Coupled Standing Wave VCO in 65-nm CMOS

65nm CMOS工艺下实现230GHz高功率宽带耦合驻波VCO,最大输出功率3.4dBm。
219–238 GHz (8.35% tuning range), 3.4-dBm max output power, -105.8 dBc/Hz phase noise @10MHz, 195 mW @1.5V
太赫兹VCO耦合振荡器谐波生成CMOS工艺高输出功率
耦合驻波振荡器结构降低无源损耗
无变容二极管频率调谐方案实现宽带操作
晶体管谐波阻抗优化提升输出功率
Abstract
This article presents a 230-GHz wideband harmonic voltage-controlled oscillator (VCO) with large output power based on a compact and low-loss structure of coupled standing wave oscillators. In order to boost the output power, oscillators are coupled together without adding extra passive loss to the circuit. Transistors with inductive drain impedances provide the necessary negative resistance to the oscillators while simultane- ously acting as active variable capacitors for frequency tuning and generate the desired second-harmonic power through their nonlinearities. Transmission lines at the drains are responsible for creating the inductive impedance as well as coupling adjacent oscillators and routing and combining the output power. There- fore, the circuit has a compact structure that minimizes passive losses. A varactor-less frequency tuning scheme is used and allows for wideband operation without sacrificing the output power. In addition to oscillator coupling and minimizing the losses, the output power has been boosted by engineering the harmonic impedance that is seen by the transistors in the circuit. The prototype chip was implemented in a 65-nm CMOS process. The output power of the VCO covers 219–238 GHz frequency band (8.35% tuning range) and delivers 3.4-dBm maximum output power. The minimum measured phase noise is −105.8 dBc/Hz (at 10-MHz offset) while consuming 195 mW from a 1.5-V supply.