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JSSC 2020第3期Power Management65nmVCO

A 230-GHz High-Power and Wideband Coupled Standing Wave VCO in 65-nm CMOS

65nm CMOS工艺下实现230GHz高功率宽带耦合驻波VCO,最大输出功率3.4dBm。
219–238 GHz (8.35% tuning range), 3.4-dBm max output power, -105.8 dBc/Hz phase noise @10MHz, 195 mW @1.5V
太赫兹VCO耦合振荡器谐波生成CMOS工艺高输出功率
耦合驻波振荡器结构降低无源损耗
无变容二极管频率调谐方案实现宽带操作
晶体管谐波阻抗优化提升输出功率
Abstract
This article presents a 230-GHz wideband harmonic voltage-controlled oscillator (VCO) with large output power based on a compact and low-loss structure of coupled standing wave oscillators. In order to boost the output power, oscillators are coupled together without adding extra passive loss to the circuit. Transistors with inductive drain impedances provide the necessary negative resistance to the oscillators while simultane- ously acting as active variable capacitors for frequency tuning and g