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JSSC 2020第3期Clocking & PLLs45nmPLLVCO

An mm-Wave Synthesizer With Robust Locking Reference-Sampling PLL and Wide-Range Injection-Locked VCO

一种采用两级架构的低噪声毫米波频率合成器,具有鲁棒锁定参考采样技术。
45nm PDSOI CMOS, 35.84GHz, 251-fs抖动, 20.6mW
毫米波频率合成器参考采样注入锁定低相位噪声
采用两级架构分别优化低频噪声合成和毫米波频率倍增
电压域参考采样相位检测器锁定环实现低相位噪声和鲁棒锁定
数字频率跟踪环路扩展注入锁定压控振荡器工作范围
Abstract
In this article, a two-stage millimeter (mm)-wave frequency synthesizer with low in-band noise and robust locking reference-sampling techniques is presented. Using a two-stage scheme allows separately dealing with the low phase noise (PN) frequency synthesis in the first stage and the mm-wave frequency multiplication in the second stage, achieving the best overall power efficiency. In the first stage, a voltage domain reference-sampling phase detector (RSPD)-locked loop (RSPLL) is adopted to achieve both low PN and robust locking without additional frequency locking loop. A reference reshaping buffer is implemented to improve the phase detector gain and in-band PN. The reference rising/falling time is programmable to achieve optimal RSPLL performance even under external disturbances. The second stage employs an injection-locked voltage-controlled oscillator (ILVCO) for 4× frequency multiplication. A low-power digital frequency tracking loop (FTL) detecting actual frequency errors is implemented in order to achieve wide operation range for the ILVCO while using a high Q tank with low power. The prototype synthesizer was fabricated in a 45-nm partially depleted silicon on insulator (PDSOI) CMOS technology. The first stage 9-GHz RSPLL achieves 144-fs integrated jitter with 7.2-mW power consumption, achieving a figure of merit (FoM) of −248 dB and the overall mm-wave synthesizer achieves 251-fs integrated jitter with 20.6-mW power consumption at 35.84 GHz, achieving an FoM of −238.9 d