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A CMOS Temperature Stabilized 2-D Mechanical Stress Sensor With 11-bit Resolution Umidjon Nurmetov , Tobias Fritz, Ernst Müllner, Christopher M. Dougherty, Michael Szelong
采用130nm CMOS工艺设计的2-D应力传感器，具有11位分辨率和66dB动态范围。
11-bit分辨率, 66dB动态范围, 357µW功耗
CMOS应力传感器温度稳定2-D测量动态范围
▸使用未修改的130nm CMOS工艺实现
▸n-well-only主传感元件和p型辅助元件
▸后校准测量应力量级和角度
Abstract
Using an unmodified 130-nm CMOS process, we present the design of an integrated 2-D CMOS stress sensor and trim methodology resulting in 11-bit resolution and 66-dB dynamic range. The n-well-only primary sensing elements and p-type auxiliary elements allow post-calibrated measurement of both stress magnitude and angle over the commercial tempera- ture range from 5 ◦Ct o9 0 ◦C. The implementation is robust to process variation, requires 357 µW when active, and is optimized for duty cycling to reduce system energy consumption.