← 返回 JSSC 论文列表JSSC 2020第4期Data Converters40nmSAR ADC
A Pipeline SAR ADC With Second-Order Interstage Gain Error Shaping Chen-Kai Hsu , Student Member , IEEE, Timothy R. Andeen, Jr.
提出一种二阶级间增益误差整形技术,显著降低流水线ADC中的量化泄漏误差。
40nm CMOS, 100MS/s, 12.5MHz带宽, 75.8dB SNDR, 1.54mW功耗, 174.9dB Schreier FoM
流水线ADC增益误差整形量化泄漏误差开环放大能效比
▸适用于闭环和开环放大的级间增益误差整形技术
▸无需额外时钟相位、长收敛时间或数字化中断
▸硬件开销小,仅占总面积2%
Abstract
This article presents an interstage gain error shaping (GES) technique that can substantially suppress the in-band quantization leakage error caused by the interstage gain error in pipeline analog-to-digital converters (ADCs). It works for both closed-loop and open-loop amplification. It does not require extra clock phases, long convergence time or an interruption of the digitization, incur large power or area overhead, or pose a constraint on the input signal. A prototype ADC equipped with the proposed second-order GES technique in 40-nm CMOS achieves a 75.8-dB signal-to-noiseand-distortion ratio (SNDR) over 12.5-MHz bandwidth while operating at 100 MS/s and consuming 1.54 mW. It achieves 174.9-dB Schreier figure of merit (FoM). The GES-related hardware only occupies less than 2% of the total active area.