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JSSC 2020第4期RF & Wireless16nm FinFET

Design of a 50-Gb-s Hybrid Integrated Si-Photonic Optical Link in 16-nm FinFET

16nm FinFET工艺下设计的50Gb/s硅光子光学链路
50Gb/s, BER<10^-12, -10.9dBm OMA, 3.16pJ/bit能效
硅光子电吸收调制器16nm FinFET光通信高能效
基于EAM的单模50Gb/s NRZ链路
T-coil过峰技术提升调制效率
三阶段TIA接收器设计
Abstract
This article presents an electro-absorption modula- tor (EAM)-based single-mode (SM) 50-Gb/s non return to zero (NRZ) Si-photonic optical link in a 16-nm FinFET. The EAM device is modeled to include its electrical and optical properties. The transmitter (TX) uses T-coil based over-peaking to improve modulation efficiency and relax transimpedance amplifier’s (TIA’s) bandwidth and noise requirement. The receiver (RX) uses a three-stage TIA with T-coils to improve bandwidth. The link sensitivity is −