JSSC 2020第4期RF & Wireless16nm FinFET

Design of a 50-Gb/s Hybrid Integrated Si-Photonic Optical Link in 16-nm FinFET

16nm FinFET工艺下设计的50Gb/s硅光子光学链路

50Gb/s, BER<10^-12, -10.9dBm OMA, 3.16pJ/bit能效

硅光子电吸收调制器16nm FinFET光通信高能效

▸基于EAM的单模50Gb/s NRZ链路

▸T-coil过峰技术提升调制效率

▸三阶段TIA接收器设计

Abstract

This article presents an electro-absorption modula- tor (EAM)-based single-mode (SM) 50-Gb/s non return to zero (NRZ) Si-photonic optical link in a 16-nm FinFET. The EAM device is modeled to include its electrical and optical properties. The transmitter (TX) uses T-coil based over-peaking to improve modulation efﬁciency and relax transimpedance ampliﬁer’s (TIA’s) bandwidth and noise requirement. The receiver (RX) uses a three-stage TIA with T-coils to improve bandwidth. The link sensitivity is −10.9-dBm optical modulation amplitude (OMA) at bit error rate (BER) < 10 −12 with 2-dB link margin at 50 Gb/s. The combined power efﬁciency of the RX, TX, and clocking is 3.16 pJ/bit and the external laser consumes 1.15 pJ/bit with 10% wall-plug efﬁciency.