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JSSC 2020第5期RF & Wireless45nm SOI CMOS

Multi-Mode 60-GHz Radar Transmitter SoC in 45-nm SOI CMOS

45nm SOI CMOS工艺的多模式60GHz雷达发射器SoC,支持CW/FMCW、脉冲和PMCW波形。
45nm SOI CMOS, 54-67GHz, 12.8dBm平均输出功率, 14.7dBm峰值功率, 40GHz雷达信号带宽
毫米波雷达多模式发射器60GHzSOI CMOS宽带频率三倍器
创新点1:多模式雷达波形集成(系统创新) - 该SoC通过单一前端实现了连续波(CW/FMCW)、脉冲和相位调制连续波(PMCW)三种雷达波形的集成,解决了传统雷达系统需要多个独立模块的问题,显著提高了系统灵活性和集成度。
创新点2:宽带电流复用频率三倍器设计(电路创新) - 采用新颖的电流复用拓扑结构,实现了>59%的输出分数带宽,显著提升了LO生成的带宽性能,同时保持了高谐波抑制比(>27 dB)。
创新点3:可配置功率混频器和基带电路(系统创新) - 通过动态配置功率混频器和基带电路,支持多种雷达模式切换,实现了脉冲模式下20-140 ps可编程脉宽(对应>40 GHz信号带宽)和PMCW模式下10 Gb/s PRBS调制。
创新点4:高集成度与能效优化(系统创新) - 在45-nm SOI CMOS工艺下实现了高集成度(2.3×0.85 mm²)和低功耗(0.51 W),同时输出功率达12.8 dBm(峰值14.7 dBm),展现了毫米波雷达SoC的实用化潜力。
Abstract
This article introduces an architecture for a millimeter-wave multi-mode radar transmitter IC, which supports three key radar waveforms: 1) continuous-wave (CW/FMCW); 2) pulse; and 3) phase-modulated continuous-wave (PMCW), all from a single front end. The proposed IC, imple- mented in a 45-nm CMOS silicon-on-insulator (SOI) process for operation in the 60-GHz band, integrates a broadband frequency tripler, a two-stage pre-amplifier, two power mixers, and mixed-signal baseband waveform generation circuitry. The transmitter radar operation in multiple modes is enabled by configuring the power mixers and the associated waveform baseband circuitry. An important advantage of this approach is that the overall signal bandwidth, a key performance metric in radar, is limited only by the RF output nodes in pulse generation. A novel broadband frequency tripler design technique based on a current-reuse topology is also proposed for LO generation with >59% output fractional bandwidth. On-wafer measurement results for the full TX IC in CW mode show an average output power of 12.8 dBm from 54 to 67 GHz with a peak power of 14.7 dBm and the harmonic rejection ratio >27 dB. The measurement in pulse mode demonstrates programmable pulsewidth from 20 to 140 ps, which translates to >40-GHz radar signal bandwidth. The PMCW mode operation is also demonstrated in this case with 10-Gb/s PRBS modulated radar signal. The IC consumes 0.51 W and occupies 2 .3 × 0.85 mm 2 of die area excluding pads.