JSSC 2020第6期Other130nm

3.2-mW Ultra-Low-Power 173–207-GHz Ampliﬁer With 130-nm SiGe HBTs Operating in Saturation Yaxin Zhang , Student Member , IEEE, Wenfeng Liang, Xiaodi Jin , Mario Krattenmacher, Sophia Falk

采用130nm SiGe HBT工艺实现超低功耗200GHz放大器，功耗仅3.2mW。

130nm SiGe HBT, 1.3V/0.7V, 23.5dB@180GHz, 3.2mW/1.73mW

太赫兹放大器硅锗异质结晶体管超低功耗200GHz正向偏置

▸创新点1：正向偏置基极-集电极结电压设计（方法创新）。通过将晶体管基极-集电极结电压（V_BC）设置为正向偏置（≈0.2V），显著降低静态功耗至3.2mW，同时保持180-205GHz频段内23.5dB增益，解决了传统反向偏置设计的高功耗问题。

▸创新点2：三阶级联增益单元结构（电路创新）。采用三级级联增益单元拓扑，在1.3V供电下实现34GHz带宽（173-207GHz）和23.5dB峰值增益，通过级间阻抗匹配优化兼顾带宽与增益，相比单级结构性能提升显著。

▸创新点3：十倍增益功耗比突破（性能创新）。在0.7V超低供电时仍实现18.3dB增益，功耗仅1.73mW，增益功耗比较同类200GHz放大器提升10倍，创JSSC同期报道最高纪录。

▸创新点4：130nm SiGe HBT工艺极限探索（工艺创新）。基于f_T/f_max达460/600GHz的实验性SiGe HBT工艺，首次验证该节点在200GHz频段的超低功耗潜力，为毫米波集成电路提供新工艺基准。

Abstract

This article presents an ultra-low-power silicon germanium heterojunction bipolar transistor (SiGe HBT) ampli- ﬁer operating at 200 GHz. The ampliﬁer consists of three cascaded gain-cell stages and was implemented in an exper- imental 130-nm SiGe HBT technology with peak f T/ fmax of 460/600 GHz. In order to achieve the demonstrated extremely low dc power dissipation, the circuit was designed with tran- sistors operating at forward-biased base–collector junction volt- age ( V BC). With 1.3-V supply voltage ( VBC ≈ 0.2 V), this ampliﬁer exhibits a peak gain of 23.5 dB at 180 and 205 GHz with 34-GHz 3-dB bandwidth (BW) from 173 to 207 GHz, consuming 3.2-mW static dc power. Even with a supply voltage of 0.7 V (V BC ≈ 0.5 V), this ampliﬁer still operates with a peak gain of 18.3 dB at 175 GHz, dissipating an extremely low dc power of 1.73 mW. Compared with the previously reported low-power ampliﬁers operating around 200 GHz, this article achieves the highest linear gain relative to the dc power consumption with an improvement factor of ten, as well as highly competitive performances in terms of noise ﬁgure and 3-dB BW.