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JSSC 2020第6期Power Management28nmLDO

A Sub-fs-FoM Digital LDO Using PMOS and NMOS Arrays With Fully Integrated 72-pF

提出一种采用PMOS和NMOS阵列的数字低压差稳压器,实现亚飞秒级速度指标。
28nm CMOS, 0.9V输入电压, 140mA负载电流, 88.4mA负载转换时88mV下冲/42mV过冲
数字低压差稳压器PMOS阵列NMOS阵列速度指标电平移位器
使用分段PMOS开关增强NMOS阵列
基于电压倍增器的周期性刷新电平移位器减少总电容
在28nm CMOS工艺下实现0.12-fs速度指标
Abstract
A digital low-dropout (DLDO) regulator using p-type MOS (PMOS) and n-type MOS (NMOS) switches is proposed to achieve a sub-fs speed figure-of-merit (FoM) by reducing the total capacitance ( C TOT) and accomplishing a com- parable output voltage droop ( VOUT) during a load transition. The proposed DLDO uses the segmented PMOS switches to fully turn on the NMOS array, whic h strengthens the intrinsic NMOS loop and maintains the undershoot and overshoot voltages of 88 and 42 mV , respectively, duri