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A 195-GHz 28-nm Class-C CMOS VCO- With a Reasonably Rigorous Result on 1-f Noise
利用Class-C操作实现K波段CMOS VCO，有效抑制1/f噪声上变频，相位噪声低至-112 dBc/Hz。
28nm CMOS, 19.5 GHz, -112 dBc/Hz at 1-MHz offset, 20.7 mW
Class-C操作CMOS VCO1/f噪声相位噪声K波段
▸Class-C操作抑制1/f噪声上变频
▸首次推导1/f^3区域相位噪声闭式表达式
▸12%调谐范围的K波段VCO设计
Abstract
Class-C operation is leveraged to implement a
K-band CMOS voltage-controlled oscillator (VCO) where the
upconversion of 1 / f current noise from the cross-coupled tran-
sistors in the oscillator core is robustly contained at a very
low level. Implemented in a bulk 28-nm CMOS technology, the
12%-tuning-range VCO shows a phase noise as low as
−112 dBc/Hz at 1-MHz offset ( −86 dBc/Hz at 100 kHz offset)
from a 19.5 GHz carrier while consuming 20.7 mW, achiev-
ing a figure of merit (FoM) of −185 dBc/H