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JSSC 2020第9期RF & WirelessInP-HEMT

300-GHz-Band 120-Gbs Wireless Front-End Based on InP-HEMT PAs and Mixers

基于InP-HEMT技术的300GHz频段120Gb/s无线前端设计
输出1dB压缩点大于6dBm（278至302GHz），转换增益-15dB，3dB IF带宽32GHz
300GHzInP-HEMT无线前端功率放大器混频器
▸采用InP-HEMT技术实现高频段无线传输
▸低阻抗级间匹配技术减少放大器级间损耗
▸背侧直流线路技术简化布局并提高增益
Abstract
We developed a 300-GHz-band 120-Gb/s wireless transceiver front-ends (TRX) using our in-house InP-based high-electron-mobility-transistor (InP-HEMT) technology for beyond-5G. The TRX is composed of the RF power ampli- fiers (PAs), mixers, and local oscillation (LO) PAs which are all packaged in individual waveguide (WG) modules by using a ridge coupler for low-loss WG-to-IC transition. RF PAs are designed using the low-impedance inter-stage-matching technique to reduce the inter-stage matching lo