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JSSC 2020第9期Power Management180nmVCO

A 16.1-bit Resolution 0.064-mm 2 Compact Highly Digital Closed-Loop Single-VCO-Based 1-1 Sturdy-MASH Resistance-to-Digital Converter With High Robustness in 180-nm CMOS

一种新型直接电阻传感器数字读出电路,采用单VCO和数字反馈环路,实现16.1位分辨率,面积仅0.064 mm²。
16.1位分辨率,171 µW功耗,0.064 mm²面积,-40°C至125°C工作范围
电阻传感器数字读出VCO噪声整形温度测量
创新点1:单VCO架构(电路创新)。该设计采用单一电压控制振荡器(VCO)实现高精度电阻传感器读取,显著减少了电路面积和功耗,同时通过闭环架构有效解决了VCO的非线性问题,实现了超过14位的线性度。
创新点2:二阶噪声整形(方法创新)。通过SMASH配置的第二环路实现了二阶噪声整形,显著提升了系统的信噪比,使得在1ms转换时间内达到16.1位有效分辨率(ENOB),同时功耗仅为171µW。
创新点3:高电磁干扰免疫(系统创新)。电路架构将传感器激励与反馈解耦,显著提高了传感器节点的电磁干扰(EMI)抗扰能力,适用于恶劣环境下的高精度测量。
创新点4:紧凑型设计(电路创新)。该电路在180nm CMOS工艺下仅占用0.064mm²面积,实现了高集成度和低功耗,能量效率达到2.4pJ/c.s. FOM,适用于便携式设备。
Abstract
A novel direct resistive-sensor-to-digital readout circuit is presented, which achieves 16.1-bit ENOB while being very compact and robust. The highly digital time-based archi- tecture employs a single voltage-controlled oscillator (VCO), counter, and digital feedback loop for the readout of an external single-ended highly nonlinear resistive sensor, such as an NTC thermistor. In addition to the inherent first-order noise shaping due to the oscillator, the second loop in SMASH configuration creates second-order noise shaping. Fabricated in 180-nm CMOS, the readout circuit achieves 16.1 bit of resolution for 1-ms conversion time and consumes only 171 µW, resulting in an excellent 2.4-pJ/c.s. FOM W for a resistive sensor interface while occupying only 0.064 mm 2. The specific closed-loop architecture tackles the VCO nonlinearity, achieving more than 14 bits of linearity. Multiple prototype chip samples have been measured in a temperature-controlled environment from −40 ◦C to 125 ◦C for the readout of commercial external NTC thermistors. A maximum temperature inaccuracy of 0.3 ◦C is achieved with only one-point trimming at room temperature. Since the circuit architecture decouples the sensor excitation from the feedback, high electromagnetic interference (EMI) immunity at the sensor node is demonstrated as well.