← 返回 JSSC 论文列表JSSC 2020第9期Other0.13-µm CMOS, 0.35-µm CMOS
A 22-ng/√ Hz 17-mW Capacitive MEMS Accelerometer With Electrically Separated Mass Structure and Digital Noise-
开发了一种噪声极低(22 ng/√Hz)且功耗适中(17 mW)的全集成MEMS加速度计,适用于基础设施监测和油气勘探等新兴应用。
22 ng/√Hz噪声, 17 mW功耗, ±0.55 g输入范围, 400 Hz带宽
MEMS加速度计低噪声低功耗数字域处理油气勘探
▸创新点1:采用检测与控制并发操作技术,通过独特的MEMS元件实现,显著提升了系统响应速度和效率,同时降低了功耗。
▸创新点2:减少伺服信号泄漏和噪声,通过优化电路设计和信号处理算法,有效降低了1-bit量化与质量不对称变形引起的噪声,使噪声水平降低了九倍。
▸创新点3:数字域处理质量不对称变形,采用先进的数字信号处理技术,解决了传统模拟方法难以处理的质量不对称问题,提高了测量精度和稳定性。
▸创新点4:采用6英寸Si/SOI/Si键合晶圆制造MEMS元件,结合标准0.13-µm CMOS和高电压0.35-µm CMOS工艺,实现了高性能与低成本的集成,适用于多种新兴应用场景。
Abstract
A fully integrated micro-electromechanical sys- tem (MEMS) accelerometer with extremely low noise level (22 ng/ √ Hz) and sufficiently low po wer consumption (17 mW) for emerging applications (such as infrastructure monitoring and next-generation oil and gas exploration) was developed. By applying concurrent operations of detection and control (enabled by a unique MEMS element) and reducing servo-signal leakage and noise caused by an interaction of 1-bit quantiza- tion and asymmetric mass deformation in the digital domain, a ninefold-lower noise level is achieved in comparison with state-of-the-art low-noise low-power MEMS accelerometers. The MEMS element was fabricated on 6-in Si/SOI/Si bonding wafers, while the detection and driver integrated circuits were fabri- cated as interface circuits with the standard 0.13- µmc o m p l e - mentary metal–oxide–semiconductor (CMOS) process and the high-voltage 0.35- µm CMOS process, respectively. The power consumption of the developed MEMS accelerometer is 17 mW from 1.4-, 1.8-, and 12-V supplies, and it has an input range of ±0.55 g and bandwidth of 400 Hz.