← 返回 JSSC 论文列表JSSC 2020第9期RF & Wireless130-nm BiCMOS
A Dual-Polarization Silicon-Photonic Coherent Transmitter Supporting 552 Gb/s/wavelength Abdelrahman H. Ahmed , Student Member , IEEE, Abdellatif
本文介绍了一种基于硅光子技术的双偏振相干发射器,支持552 Gb/s的数据传输速率。
6 V峰峰值摆幅,3.6%总谐波失真,40 GHz以上电带宽
硅光子双偏振相干发射器Mach-Zehnder调制器SiGe驱动器
▸创新点1:硅光子Mach-Zehnder调制器 - 采用绝缘体上硅(SOI)工艺实现高带宽、高线性度的集成光调制器,支持双偏振(DP)16-QAM调制,单波长数据传输速率达272Gb/s,系统级创新显著提升频谱效率。
▸创新点2:高摆幅SiGe驱动器 - 基于130nm BiCMOS工艺设计,采用电压击穿增强技术确保可靠性,实现6V峰峰值差分输出摆幅和40GHz以上电带宽,电路级创新突破传统驱动器的电压限制。
▸创新点3:电阻电容分割技术 - 结合零峰化和退化等方法,优化驱动器的增益、带宽、摆幅和线性度,总谐波失真(THD)低至3.6%,方法创新解决高频信号完整性问题。
▸创新点4:全硅/SiGe协同设计 - 通过硅光子调制器与SiGe驱动器的协同封装,在2.4V驱动摆幅下实现单波长超0.5Tb/s速率,系统架构创新降低成本并匹配LiNbO3调制器性能。
Abstract
Coherent optical links improve spectral efficiency over their intensity-modulation direct-detect (IM-DD) counter- parts using advanced modulation schemes such as quadrature phase shift keying (QPSK) and quadrature amplitude modulation (QAM), and by utilizing dual polarization (DP) of light. This increase in spectral efficiency also leads to stringent requirements for the link components. The transmitter (TX) must simultane- ously achieve high bandwidth (BW), linearity, output swing, and reliability. In this article, we present a silicon-photonic Mach– Zehnder modulator-based optical TX on an Silicon-on-Insulator (SOI) process, and linear, high-swing SiGe drivers on 130-nm BiCMOS process. The output stage of the driver uses a voltage breakdown enhancement technique to ensure the reliability of the TX. A resistor-based capacitor splitting technique is introduced, and aided by other methods such as zero-peaking and degeneration, the targeted gain, BW, swing, and linearity for the driver are realized. The driver achieves a differential swing of 6 V peak-to-peak, a total harmonic distortion (THD) of 3.6%, and more than 40 GHz of electrical BW. Co-designed and co-packaged with the silicon-photonic modulators, the TX achieves 272 Gb/s/wavelength with DP-16 QAM at 6-V peak-to- peak driver swing and exceeds 0.5 Tb/s/wavelength data rates with DP-16 QAM at 2.4-V peak-to-peak driver swing. The low- cost, compact, and all-Si/SiGe design matches the required optical SNR performance of LiNbO