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JSSC 2020第9期Clocking & PLLs130nm SiGe BiCMOSVCO

Analysis and Design of a 17-GHz All- npn Push-Pull Class-C VCO

提出一种仅使用npn晶体管的17GHz推挽式C类VCO,通过磁变压器实现正反馈,降低功耗。
17GHz, -116dBc/Hz@1MHz, 13.7mA@3.3V, 15%调谐范围
推挽振荡器C类VCO磁变压器相位噪声SiGe BiCMOS
创新点1:电路创新 - 提出了一种仅使用npn晶体管的推挽振荡器拓扑结构,突破了传统推挽电路需要互补器件的限制,适用于SiGe HBT、InP HBT等单极性高速工艺(如17 GHz工作频率)。
创新点2:方法创新 - 利用磁变压器实现共集电极差分对的正反馈机制,通过电磁耦合替代传统交叉耦合结构,优化了相位噪声性能(实测1MHz偏移处-116dBc/Hz)。
创新点3:功耗创新 - 通过推挽操作和变压器能量复用技术,在相同振荡幅度下将偏置电流降低50%(实测13.7mA@3.3V),显著提升能效比。
创新点4:系统创新 - 提出可扩展设计方法论,通过变压器参数调控实现15%调谐范围,方案可适配GaN HEMT等多种单极型高速工艺平台。
Abstract
A push-pull oscillator topology that uses only one type of active device is proposed in this article. A magnetic transformer is leveraged to set positive feedback around a common-collector differential npn transistor pair , implementing the push-pull operation. This results in half the bias current for a given amplitude of oscillation, compared to more standard oscillator topologies. A thorough phase noise analysis of the circuit is carried out, emphasizing the crucial role of the magnetic transformer in the circuit operation and noise optimization. Proof-of-concept prototypes implemented in a 130-nm SiGe BiCMOS technology operate at 17 GHz and show a phase noise as low as −116 dBc/Hz at 1-MHz offset, while drawing 13.7 mA from the 3.3-V supply. The tuning range is 15%. While the circuit is demonstrated in SiGe BiCMOS technology, it lends itself equally well to implementations in other technologies where only one fast device is available, such as SiGe HBT, InP HBT, and GaN HEMT.