← 返回 JSSC 论文列表JSSC 2020第9期Data Converters0.18-µmSAR ADC
Bandwidth-Enhanced Oversampling Successive Approximation Readout Technique for Low-Noise Power-Efficient MEMS
提出带宽增强型过采样逐次逼近读出技术,降低MEMS电容加速度计噪声并提高能效
0.18-µm BCD工艺,飞法级电容检测
MEMS电容加速度计噪声降低能效优化过采样技术
▸创新点1:带宽增强型过采样技术(方法创新)——通过创新的BE-OSA技术,在不增加放大器跨导的情况下显著提升SC CVC的采样频率,从而有效降低噪声基底至0.9 aF/√Hz,相比传统方法(2.5 aF/√Hz)提升2.7倍。
▸创新点2:低功耗开关电容电容-电压转换器设计(电路创新)——优化SC CVC结构,在0.18-µm BCD工艺下实现243 fJ的绝对能效指标(FoM2),相比同类开关电容读出电路达到最佳能效。
▸创新点3:系统级能效优化(系统创新)——通过协同设计前端SC CVC与后端ADC,实现相对能效指标FoM3=0.14,在保持开环结构低功耗优势的同时突破femto-farad级电容检测限制。
▸创新点4:寄生电容噪声抑制技术(电路创新)——针对MEMS加速度计寄生电容热噪声问题,提出新型采样时序控制方法,在femto-farad级信号检测中实现非线性误差补偿。
Abstract
The bandwidth-enhanced oversampling successive approximation (BE-OSA) readout technique is proposed in this article to reduce the noise floor of the readout circuit for micro-electromechanical systems (MEMS) capacitive accelerome- ter while achieving high power efficiency in terms of the figure of merit (FoM). The open-loop structure has been widely used in MEMS capacitive accelerometer for the Internet of Things (IoT) applications due to its low power consumption. However, in the open-loop accelerometer, the capacitance variation in the sensing element is limited to the femto-farad level to overcome nonlinearity. As a result, the thermal noise from the parasitic capacitance becomes significant. The ability of the readout circuit to deal with thermal noise is determined by the front-end switched-capacitor capacitance-to-voltage convertor (SC CVC) rather than the back-end analog-to-digital converter (ADC). To reduce the noise floor, the traditional oversampling method increases the sampling frequency of SC CVC by increasing the transconductance of the amplifier, but this leads to low power efficiency. In this work, the BE-OSA technique provides a high power efficiency method as it increases the sampling frequency of SC CVC without increasing the transconductance of the amplifier. The SC CVC based on the BE-OSA technique is demonstrated in a readout circuit fabricated by a commercial 0.18-µm BCD process and tested with a femto-farad MEMS accelerometer. The measurement results show that