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The Design of a CMOS Nanoelectrode Array With 4096 Current-ClampVoltage-Clamp Am
设计了一种具有4096个纳米电极的CMOS集成电路，用于高并行性、高灵敏度的神经元电生理记录。
4096个PtB纳米电极，20µm间距，±15 pA至±0.7 µA电流注入，5 pA分辨率
CMOS集成电路纳米电极阵列神经元记录开关电容电流注入电生理
▸新型开关电容电流注入器
▸4096个铂黑纳米电极阵列
▸结合CMOS MEA并行性和膜片钳高灵敏度
Abstract
CMOS microelectrode arrays (MEAs) can record
electrophysiological activities of a large number of neurons in
parallel but only extracellularly with a low signal-to-noise ratio.
Patch-clamp electrodes can perform intracellular recording with
a high signal-to-noise ratio but only from a few neurons in
parallel. Recently, we have developed and reported a neuro-
electronic interface that combines the parallelism of the CMOS
MEA and the intracellular sensitivity of the patch clamp. Here,
we report th