← 返回 JSSC 论文列表JSSC 2020第10期Power Management150nmCMOS Image Sensor
A 32x 32-Pixel CMOS Imager for Quantum Optics With Per-SPAD TDC 1948 Fill-Factor
一款用于量子光学的高填充因子32x32像素CMOS图像传感器，具有单光子探测和时间数字转换功能。
44.64µm像素，19.48%填充因子，210.2ps分辨率，50ns（8位）范围TDC，1.28-LSB DNL，1.92-LSB INL
单光子雪崩二极管时间数字转换器量子成像CMOS图像传感器超分辨率
▸每SPAD集成TDC，记录纠缠光子空间互相关函数
▸电流机制实现高达1MHz的观测速率，避免读取空帧
▸行跳过机制检测无SPAD活动，提高占空比
Abstract
This article reports the design and characterization
of a 32 × 32 single-photon avalanche diode (SPAD) time-resolved
image sensor for quantum imaging applications fabricated in a
150-nm CMOS standard technology. A per-SPAD time-to-digital
converter (TDC) records the spatial cross correlation functions
of a flux of entangled photons. Each 44.64- µm pixel with 19.48%
fill-factor features a 210.2-ps resolution, 50-ns (8-bit) range TDC
with 1.28-LSB differential and 1.92-LSB integral nonlinearity
(DNL