← 返回 JSSC 论文列表JSSC 2020第10期Data Converters180nmSAR ADC
A Single-Supply CDAC-Based Buffer-Embedding SAR ADC With Skip-Reset Scheme Having Inherent Chopping Capability Min-Jae Seo , Dong-Hwan Jin, Y e-Dam Kim, Jong-Pal Kim
一种基于CDAC的单电源缓冲嵌入式SAR ADC,采用跳复位方案,具有高能效和轨到轨信号摆幅。
180nm CMOS, 640-kHz BW, 74.8-dB SNDR, 89.1-dB SFDR, 180.1 μW
SAR ADC单电源缓冲嵌入式跳复位方案电容电平移位
▸创新点1:电容电平移位偏置方案实现轨到轨信号摆幅(电路创新)。该方案通过电容耦合实现电平移位,使得源极跟随器缓冲器在单电源供电下仍能支持全摆幅输入信号,显著提升了动态范围,适用于低电压设计。
▸创新点2:负升压电路解决偏置泄漏问题(电路创新)。提出的负升压电路采用薄氧晶体管设计,通过开关电容技术消除偏置泄漏,同时避免了器件可靠性问题,为电平移位提供了稳定的负偏置电压。
▸创新点3:跳复位方案降低功耗(系统创新)。结合8倍过采样和低功耗增量读出方法,该方案通过跳过冗余复位操作减少功耗,并具备固有斩波功能,实测功耗仅180.1μW,Schreier FoM达167.3dB。
▸创新点4:缓冲器嵌入SAR ADC架构(系统创新)。将源极跟随器缓冲器直接集成到SAR ADC的CDAC结构中,优化了信号路径,在0.192mm²面积下实现74.8dB SNDR和89.1dB SFDR,适用于生物医疗等低功耗场景。
Abstract
This article presents a power-efficient buffer- embedding successive approximation register (SAR) analog-to- digital converter (ADC) that utilizes a core power supply for the source-follower buffer, having a rail-to-rail signal swing due to the capacitive-level shifting bias scheme. Also, to implement the switched-capacitor (SC) level-shifting bias scheme without bias leakage issue, a negative boosting circuit is proposed. The boosting circuit is designed without any reliability issue, even with the use of thin-oxide transistors. For low-power applications, such as the biomedical system and CMOS image sensor, the proposed ADC incorporates a skip-reset (SR) scheme, a low-power delta-readout method. In conjunction with 8 × oversampling and the power-saving SR technique that has inherent chopping capability, a prototype SAR ADC fabri- cated in a 180-nm CMOS technology achieves a peak 74.8-dB signal-to-noise and distortion ratio (SNDR) and an 89.1-dB spurious free dynamic range (SFDR) for a 640-kHz bandwidth (BW) with an oversampling ratio (OSR) of 8, resulting in a Schreier figure of merit (FoM) of 167.3 dB. The chip area occupies 0.192 mm 2, and the power consumption is 180.1 μW.