← 返回 JSSC 论文列表JSSC 2020第11期Image Sensors65nm
A 52-Mpixel 884-dB DR 12-in CMOS X-Ray Detector With 16-bit Column-Parallel Cont
本文介绍了一种12英寸晶圆级CMOS X射线探测器，具有高分辨率、低噪声和高动态范围。
16-bit ADC, 45μm pitch, DNL +0.79/-0.65 LSB, INL +6.85/-6.15 LSB, SNR 88.5 dB, 12.6μs转换时间
CMOS X射线探测器3T像素增量Δ-Σ ADC晶圆级高动态范围
▸采用3T像素结构，结合电压控制存储电容
▸使用列并行连续时间增量Δ-Σ ADC
▸实现12英寸晶圆上的高均匀性和鲁棒性
Abstract
This article presents a 5.2-Mpixel, 12-in wafer-scale
CMOS X-ray detector that consists of lithographically stitched
169 sub-chips. The detector employs a 3T pixel with a
voltage-controlled storage capacitor to achieve both a low
dark random noise (RN) and a large well capacity, and the
pixel outputs are read out by column-parallel continuous-time
(CT) incremental delta–sigma ( ) analog-to-digital convert-
ers (ADCs). The use of a CT incremental ADC enables
high resolution and low energy co