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IV Measurement Results
该论文介绍了一种在TSMC 65纳米低功耗CMOS技术中实现的剂量计系统，并对其电气性能和像素间变化进行了测量和分析。
65nm CMOS, 512µm×512µm检测面积, 1/64填充因子, PNR 27.7 dB at 3 ms PW
剂量计系统TSMC 65纳米CMOS技术电气测量像素间变化
▸采用TSMC 65纳米低功耗CMOS技术
▸检测面积为512µm×512µm，填充因子为1/64
▸在67.5 MeV质子束下验证系统性能
Abstract
dosimeter system was
fabricated in TSMC 65 nm Low-power CMOS technology.
The ASIC is 940µm×960µm and its die photo is shown in
Fig. 9. The detection area is 512µm×512µm with fill factor
of 1/64.
This section describes the measurement setups and results.
To analyze the electrical noise and pixel-to-pixel variations, a
separate 16×16 testing chip was measured. The whole system
was verified under a 67.5 MeV proton beam generated by a
76-inch cyclotron. The measurement results were compared to
those o