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JSSC 2021第1期Analog Circuits130nmBandgap Reference

A 1.16-V 5.8-to-13.5-ppm/ ◦C Curvature-Compensated CMOS Bandgap Reference Circuit With a Shared Offset-Cancellation Method for Internal Amplifiers

一种高精度电流模式带隙基准电路,采用共享偏移补偿方案,适用于宽温度范围。
1.16V输出, 3.3V供电, -40°C至150°C温度范围, ±8.2mV输出变化
带隙基准曲率补偿CMOS温度补偿偏移消除
创新点1:共享偏移补偿方案(电路创新)。通过共享偏移补偿电路,减少了每个放大器所需的独立偏移补偿电路,显著节省了芯片面积和功耗,同时将放大器引入的输出误差控制在±4.6 μV以内。
创新点2:多段曲率补偿方法(方法创新)。采用分段曲率补偿技术,有效缓解了双极结晶体管基极-发射极电压对温度的非线性依赖,使得输出电压在-40°C至150°C温度范围内的偏移小于1 mV。
创新点3:内部放大器偏移消除技术(电路创新)。通过创新的偏移消除技术,确保两个运算放大器生成的PTAT和CTAT电流源的精度,提高了整体电路的稳定性和准确性,七组样品的输出电压变化仅为±8.2 mV。
Abstract
This article introduces an accurate current-mode bandgap reference circuit design with a novel shared offset compensation scheme for its internal amplifiers. This bandgap circuit has been designed to operate over a very wide tem- perature range from −40 ◦C to 150 ◦C. Its output voltage is 1.16 V with a 3.3-V supply voltage. A multi-section curvature compensation method alleviates the error from the bipolar junction transistor’s base–emitter nonlinear voltage dependence on temperature. The bandgap reference circuit contains two operational amplifiers that are utilized to generate proportional- to-absolute-temperature (PTAT)and complementary-to-absolute- temperature (CTAT) current sources. With the implementation of the described shared offset-cancellation methodology, the sim- ulated output inaccuracy introduced by the amplifier is kept to a 5 σ offset within ±4.6 μV while allowing to conserve die size and power consumption by preventing that each amplifier is accompanied by its own active auxiliary offset-cancellation circuit. Designed and fabricated in a 130-nm CMOS process technology, the bandgap reference has a measured output voltage shift of less than 1 mV over a −40 ◦C to 150 ◦C temperature range and an overall variation of ±8.2 mV across seven measured samples without trimming.