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Introduction to the Special Issue on the 2020 IEEE International Solid-State Cir
2020年IEEE国际固态电路会议精选论文特刊，涵盖高速互连、数字电路及AI等领域。
112 Gb/s PAM-4, BER <1E-8, 37-dB插入损耗
高速互连数字信号处理CMOS技术FinFET3D集成
▸首次完整的112 Gb/s PAM-4有线收发器设计
▸基于逆变器的Gm/逆Gm负载单元提高能效
▸3D集成技术应用于高速发射器
Abstract
cial Issue of the IEEE J OURNAL OF SOLID -
STATE CIRCUITS is dedicated to a collection of the
best articles selected from the 2020 IEEE International
Solid-State Circuits Conference (ISSCC) that took place on
February 16–20, 2020, in San Francisco, CA, USA. This Spe-
cial Issue covers articles from the Wireline, Digital Circuits,
Digital Architectures and Sys tems (DASs), Machine Learning
and AI, and Memory Committees.
II. W
IRELINE ARTICLES
Data centers continue to drive the demand for ultra-hi